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CY8CLEDAC02 Arkusz danych(PDF) 13 Page - Cypress Semiconductor |
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CY8CLEDAC02 Arkusz danych(HTML) 13 Page - Cypress Semiconductor |
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13 / 20 page ![]() CY8CLEDAC02 Document Number: 001-54879 Rev. *C Page 13 of 20 Electrical Characteristics Notes 2. Adjust VCC above startup threshold before setting at 12 V. 3. These parameters are not 100 percent tested, guaranteed by design and characterization. 4. Operating frequency varies based on line and load conditions. VCC=12 V; –40 C TA 85 C unless otherwise specified [2] Symbol Description Min Typ Max Units Notes VIN Section (pin 3) VIN Input voltage range 0 – 1.8 V During normal operation (after startup) IINST Startup current – 10 15 AVIN = 10 V, CVCC = 10F ZVIN Input impedance – 2.5 – k During normal operation (after startup) VSENSE Section (pin 2) IBVS Input leakage current – – 1 AVSENSE = 2 V VSENSENOM Nominal voltage threshold 1.523 1.538 1.553 V TA = 25 C, Negative edge VSENSEMAX Output OVP threshold 1.683 1.700 1.717 V TA = 25 C, Negative edge OUTPUT Section (pin 7) RDS(ON)LO Output low level ON-Resistance – 30 – ISINK = 5 mA RDS(ON)HI Output high level ON-Resistance – 60 – ISOURCE = 5 mA tR[3] Rise time (10 percent to 90 percent) – 50 – ns TA = 25 C, CL = 330pF tF[3] Fall time (90 percent to 10 percent) – 30 – ns TA = 25 C, CL = 330pF fSWMAX[4] Maximum switching frequency – 200 – kHz VCC Section (pin 8) VCCMAX Maximum operating voltage – – 16 V VCCST Startup threshold 11 12 13 V VCC Rising VCCUVL Undervoltage lockout threshold 7.0 7.5 8.0 V VCC Falling ICC Operating current – 3.9 4.5 mA CL = 330pF, VSENSE = 1.5 V VCC-CLAMP Zener diode clamp voltage – 19 – V Test current of 10 mA ISENSE Section (pin 6) VOCP Overcurrent threshold limit – 1.9 – V VRSNS ISENSE short protection reference – 0.16 – V VREGTH CC regulation threshold limit – 1.8 – V VT Section (pin 4) VSDTH Shutdown threshold – 0.09 – V IBVSD Input leakage current – – 1.0 AVSD = 1.0V ISD Pull-up current source 95 100 105 A BOOST Section (pin 1) RDS(ON)LO-TR Output low level ON-Resistance – 100 – ISINK = 5 mA RDS(ON)HI-TR Output high level ON-Resistance – 200 – ISOURCE = 5 mA tR-BST[3] Rise time – 60 – ns tF-BST[3] Fall time – 60 – ns [+] Feedback |
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