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IXRH40N120 Arkusz danych(PDF) 5 Page - IXYS Corporation |
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IXRH40N120 Arkusz danych(HTML) 5 Page - IXYS Corporation |
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5 / 5 page ![]() 5 - 5 © 2005 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. IXRH 40N120 Fig. 13 Typ. turn off characteristics of the internal diode Fig. 14 Typ. turn off characteristics of the internal diode Fig. 15 Typical gate charge Fig. 16 Typ. transient thermal impedance Ri 0.034 0.048 0.092 0.174 0.075 τ 0.0001 0.0035 0.02 0.142 0.18 I RM t rr di F/dt A/µs I RM t A ns 0 100 200 300 400 500 20 30 40 50 60 900 1200 1500 1800 2100 2400 0 100 200 300 400 500 30 31 32 33 34 35 36 di F/dt Q rr A/µs Q G 0.00 0.04 0.08 0.12 0.16 0 4 8 12 16 20 V CE = 120 V I C = 35 A V C 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 t s Z thJC K/W 0.45 IXRH40N120 V CE = -600 V V GE = ±15 V I C = 35 A T J = 125°C V CE = -600 V V GE = ±15 V T J = 125°C C Fig. 17 turn-on/turn-off with external diode (DSEP 30-12) Fig. 18 turn-on/turn-off with internal diode Device under test current sensing Gate Resistor Driver Voltage source Free wheeling diode DUT current sensing current sensing +15 V Driver Voltage source IGBT is on DUT Gate Resistor |
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