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© 2005 IXYS All rights reserved

IXYS reserves the right to change limits, test conditions and dimensions.

IXRH 40N120

V

CES

= ±1200 V

I

C25

= 55 A

V

Features

• IGBT with NPT (non punch through)

structure

• reverse blocking capability

- function of series diode monolithically

integrated, no external series diode

required

- soft reverse recovery

• positive temperature coefficient of

saturation voltage

• Epoxy of TO-247 package meets

UL 94V-0

Applications

converters requiring reverse blocking

capability:

- current source inverters

- matrix converters

- bi-directional switches

- resonant converters

- induction heating

- auxiliary switches for soft switching

in the main current path

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

±1200

V

V

GES

± 20

V

I

C25

T

25°C

55

A

I

C90

T

90°C

35

A

I

CM

V

80

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

600

V

P

tot

T

300

W

TO-247 AD

G

C

E

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

C (TAB)

IGBT with Reverse

Blocking capability

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

CE(sat)

I

25°C

2.3

2.7

V

T

2.8

V

V

GE(th)

I

48

V

I

CES

V

25°C

50

µA

T

3.0

mA

I

GES

V

500

nA

Q

Gon

V

90

nC

C

E

G