RC2012 datasheet(33/40 Pages) SAMSUNG

33 / 40 page

Item

Specifications

The rated power is the maximum continuous loading power at 70℃ ambient temperature.

For ambient temperature above 70℃, the loading power follows the below power derating curve.

100

Operation area

-55

-40

120

Ambient Temperature(

℃)

Rated load percent (

125

Specification

Power Derating Curve

Equivalent Circuit Configuration

The specifications and designs contained herein may be subject to change without notice.

Please contact our sales representatives or product engineers before order.

Attenuation Value

Attenuation Value Tolerance

Characteristic Impendance

Power Rating

Frequency Range

VSWR (Voltage Standing Wave Ratio)

Number of terminals

Category Temperature Range

(Operating Temperature Range)

0 dB, 1 dB, 2 dB, 3 dB, 4 dB, 5 dB,

6 dB, 7 dB, 8 dB, 9 dB, 10dB

0 dB, 1 dB, 2 dB, 3 dB, 4 dB, 5 dB : ± 0.3 dB

6 dB, 7 dB, 8 dB, 9 dB, 10dB

: ± 0.5 dB

Ω

0.04W / package

DC to 3 GHz

1.3 max

4 terminals

-55

℃ to +125 ℃

Operation

Notes

Example of land

Pattern Design

Recommended

Soldering Conditions

General Structure

General

Precision

Jumper

Low ohms

(RC Series)

Low ohms

(RUT Series)

Ultra Low Ohms

(RU Series)

Ultra Low Ohms

(RUK Series)

Ultra Low Ohms

(RUW Series)

Arrays

(CONVEX Type)

Arrays

(CONCAVE Type)

Arrays

(FLAT Type)

Arrays for

Memory Modules

Attenuator

Characteristics

Performance

Packaging

Standard

Resistance Value

RC2012 Arkusz danych(PDF) 33 Page - Samsung semiconductor

RC2012 Arkusz danych(HTML) 33 Page - Samsung semiconductor

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