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STGIPS30C60 Arkusz danych(PDF) 6 Page - STMicroelectronics |
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STGIPS30C60 Arkusz danych(HTML) 6 Page - STMicroelectronics |
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6 / 21 page ![]() Electrical ratings STGIPS30C60 6/21 DocID022471 Rev 6 2.2 Thermal data Table 6. Thermal data Symbol Parameter Value Unit R thJC Thermal resistance junction-case single IGBT 2.4 °C/W Thermal resistance junction-case single diode 5 °C/W Figure 3. Maximum IC(RMS) current vs. switching frequency (1) Figure 4. Maximum IC(RMS) current vs. fsine (1) 1. Simulated curves refer to typical IGBT parameters and maximum R thj-c. AM17110v1 12 14 16 18 20 22 24 26 28 30 32 Ic(RMS) (A) 48 12 16 fsw (kHz) 3-phase sinusoidal PWM VPN = 300 V, Modulation Index = 0.8, PF = 0.6, Tj= 150 °C, fsine= 60 Hz Tc = 80 °C Tc = 100 °C AM17111v1 8 10 12 14 16 18 20 Ic(RMS) (A) 110 100 fsine (Hz) 3 -phase sinusoidal PWM VPN = 300 V, Modulation Index = 0.8, PF = 0.6, Tj= 150°C,Tc = 100 °C fsw = 12 kHz fsw = 16 kHz fsw = 20 kHz |
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