DocID022471 Rev 6

7/21

STGIPS30C60

Electrical characteristics

3

Electrical characteristics

T

J

= 25 °C unless otherwise specified.

Note:

the switching time of IGBT itself under the internally given gate driving condition.

Table 7. Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V

CE(sat)

Collector-emitter

saturation voltage

V

CC

= V

boot

= 15 V, V

IN

(1)

= 0 ÷ 5 V,

I

C

= 30 A

-1.9

V

V

CC

= V

boot

= 15 V, V

IN

(1)

= 0 ÷ 5 V,

I

C

= 30 A, T

J

= 125 °C

-2.2

I

CES

Collector-cut off current

(V

IN

(1)

= 0 “logic state”)

V

CE

= 550 V, V

CC

= V

Boot

= 15 V

-

100

μA

V

F

Diode forward voltage

V

IN

(1)

= 0 “logic state”, I

C

= 30 A

-

2.0

2.3

V

Inductive load switching time and energy

t

on

Turn-on time

V

PN

= 300 V,

V

CC

= V

boot

= 15 V,

V

IN

(1)

= 0 ÷ 5 V,

I

C

= 30 A

(see

Figure 5)

-440

-

ns

t

c(on)

Crossover time (on)

-

190

-

t

off

Turn-off time

-

780

-

t

c(off)

Crossover time (off)

-

135

-

t

rr

Reverse recovery time

-

100

-

E

on

Turn-on switching losses

-

870

-

μJ

E

off

Turn-off switching losses

-

740

-

1.

Applied between

HIN

i

, LIN

i and

G

ND

for i = U, V, W. (LIN inputs are active-low).