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STM32F205RB Arkusz danych(PDF) 79 Page - STMicroelectronics |
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STM32F205RB Arkusz danych(HTML) 79 Page - STMicroelectronics |
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79 / 163 page ![]() STM32F205xx, STM32F207xx Electrical characteristics Doc ID 15818 Rev 7 79/163 5.3.9 Internal clock source characteristics The parameters given in Table 27 and Table 28 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. High-speed internal (HSI) RC oscillator Figure 32. ACCHSI versus temperature Table 27. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. -- 1 % Factory- calibrated TA = –40 to 105 °C –8 - 4.5 % TA = –10 to 85 °C –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI) (3) 3. Guaranteed by design, not tested in production. HSI oscillator startup time -2.2 4 µs IDD(HSI) HSI oscillator power consumption -60 80 µA -8 -6 -4 -2 0 2 4 6 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Temperature (°C) max avg min |
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