BD238S datasheet(1/4 Pages) FAIRCHILD

Numer części	BD238S

Szczegółowy opis	Medium Power Linear and Switching Applications

PDF	4 Pages

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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Rev. A, February 2000

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW=300

µs, duty Cycle=1.5% Pulsed

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD234

: BD236

: BD238

- 45

- 60

- 100

V

VCEO

Collector-Emitter Voltage

: BD234

: BD236

: BD238

- 45

- 60

- 80

V

VCER

Collector-Emitter Voltage

: BD234

: BD236

: BD238

- 45

- 60

- 100

V

VEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current (DC)

- 2

A

ICP

*Collector Current (Pulse)

- 6

A

PC

Collector Dissipation (TC=25°C)

25

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

* Collector-Emitter Sustaining Voltage

: BD234

: BD236

: BD238

IC = - 100mA, IB = 0

- 45

- 60

- 80

V

ICBO

Collector Cut-off Current

: BD234

: BD236

: BD238

VCB = - 45V, IE = 0

VCB = - 60V, IE = 0

VCB = - 100V, IE = 0

- 100

µA

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 1

mA

hFE

* DC Current Gain

VCE = - 2V, IC = - 150mA

VCE = - 2V, IC = - 1A

40

25

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = - 1A , IB = - 0.1A

- 0.6

V

VBE(on)

* Base-Emitter ON Voltage

VCE = - 2V, IC = - 1A

- 1.3

V

fT

Current Gain Bandwidth Product

VCE = - 10V, IC = -250mA

3

MHz

BD234/236/238

Medium Power Linear and Switching

Applications

• Complement to BD 233/235/237 respectively

1

TO-126

1. Emitter

2.Collector

3.Base

Podobny numer części - BD238S

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STMicroelectronics	BD238	75Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS Sep-1997
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