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PACDN017Q Arkusz danych(PDF) 3 Page - California Micro Devices Corp

Numer części PACDN017Q
Szczegółowy opis  18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP
PDF  3 Pages
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Producent  CALMIRCO [California Micro Devices Corp]
Strona internetowa  http://www.calmicro.com
Logo CALMIRCO - California Micro Devices Corp

PACDN017Q Arkusz danych(HTML) 3 Page - California Micro Devices Corp

  PACDN017Q Datasheet HTML 1Page - California Micro Devices Corp PACDN017Q Datasheet HTML 2Page - California Micro Devices Corp PACDN017Q Datasheet HTML 3Page - California Micro Devices Corp  
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©1999 California Micro Devices Corp. All rights reserved.
11/98
3
CALIFORNIA MICRO DEVICES
PAC DN017
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically
increased negative voltage on the line being protected.
Another consideration is the output impedance of the power supply for fast transient currents. Most power supplies
exhibit a much higher output impedance to fast transient current spikes. In the VZ equation above, the VSupply term, in
reality, is given by (VDC + Iesd x Rout), where VDC and Rout are the nominal supply DC output voltage and effective output
impedance of the power supply respectively. As an example, a Routof 1 ohm would result in a 10V increment in VZ for a
peak Iesd of 10A.
To mitigate these effects, a Zener diode has been integrated into this Protection Array between VP and VN. This Zener
diode clamps the maximum voltage of VP relative to VN at the breakdown voltage of the Zener diode. Although not strictly
necessary, it is recommended that VP be bypassed to the ground plane with a high frequency bypass capacitor. This will
lower the channel clamp voltage, and is especially effective when VP is much lower than the Zener breakdown voltage.
The value of this bypass capacitor should be chosen such that it will absorb the charge transferred by the ESD pulse with
minimal change in VP. Typically a value in the 0.1 µF to 0.2 µF range is adequate for IEC-61000-4-2 level 4 contact
discharge protection (8KV). For higher ESD voltages, the bypass capacitor should be increased accordingly. Ceramic chip
capacitors mounted with short printed circuit board traces are good choices for this application. Electrolytic capacitors
should be avoided as they have poor high frequency characteristics.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the
Protection Array as possible, with minimum PCB trace lengths to the power supply and ground planes to minimize stray
series inductance.



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