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DMN4060SVT Arkusz danych(PDF) 2 Page - Diodes Incorporated

Numer części DMN4060SVT
Szczegółowy opis  45V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN4060SVT Arkusz danych(HTML) 2 Page - Diodes Incorporated

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DMN4060SVT
Document number: DS35702 Rev. 2 - 2
2 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMN4060SVT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
45
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
4.8
3.8
A
t<10s
TA = 25°C
TA = 70°C
ID
6.1
4.8
A
Continuous Drain Current (Note 5) VGS = 5V
Steady
State
TA = 25°C
TA = 70°C
ID
4.1
3.2
A
t<10s
TA = 25°C
TA = 70°C
ID
5.2
4.1
A
Maximum Body Diode Forward Current (Note 5)
IS
2.1
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
IDM
30
A
Avalanche Current (Note 6) L = 0.1mH
IAR
14.2
A
Avalanche Energy (Note 6) L = 0.1mH
EAR
10
mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
TA = 25°C
PD
1.2
W
TA = 70°C
0.75
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
RθJA
106
°C/W
t<10s
69
°C/W
Total Power Dissipation (Note 5)
TA = 25°C
PD
1.8
W
TA = 70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
68
°C/W
t<10s
44
°C/W
Thermal Resistance, Junction to Case (Note 5)
RθJC
20
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
0
20
40
60
80
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
0.001 0.01
0.1
1
10
100
1,000
0.0001
Single Pulse
R
= 72 C/W
R
= r
* R
T - T = P * R
θ
θθ
θ
JA
JA(t)
(t)
JA
JA
JA(t)
°
0.1
1
10
100
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
R
Limited
DS(on)
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
P
= 10 s
W
µ



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