Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

Preview PDF HTML

DMN4060SVT Arkusz danych(PDF) 3 Page - Diodes Incorporated

Numer części DMN4060SVT
Szczegółowy opis  45V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN4060SVT Arkusz danych(HTML) 3 Page - Diodes Incorporated

  DMN4060SVT Datasheet HTML 1Page - Diodes Incorporated DMN4060SVT Datasheet HTML 2Page - Diodes Incorporated DMN4060SVT Datasheet HTML 3Page - Diodes Incorporated DMN4060SVT Datasheet HTML 4Page - Diodes Incorporated DMN4060SVT Datasheet HTML 5Page - Diodes Incorporated DMN4060SVT Datasheet HTML 6Page - Diodes Incorporated DMN4060SVT Datasheet HTML 7Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 3 / 7 page
background image
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
3 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMN4060SVT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
45
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
100
nA
VDS = 45V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
⎯
3
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
37
46
m
Ω
VGS = 10V, ID = 4.3A
⎯
52
62
VGS = 4.5V, ID = 4A
Forward Transfer Admittance
|Yfs|
⎯
4.5
⎯
S
VDS = 10V, ID = 4.3A
Diode Forward Voltage
VSD
⎯
0.7
1.2
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
⎯
1287
⎯
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
57
⎯
Reverse Transfer Capacitance
Crss
⎯
44
⎯
Gate Resistance
RG
⎯
1.2
⎯
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V)
Qg
⎯
22.4
⎯
nC
VDS = 30V, ID = 4.3A
Total Gate Charge (VGS = 4.5V)
Qg
⎯
10.4
⎯
Gate-Source Charge
Qgs
⎯
4.9
⎯
Gate-Drain Charge
Qgd
⎯
3.0
⎯
Turn-On Delay Time
tD(on)
⎯
6.6
⎯
nS
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
Turn-On Rise Time
tr
⎯
8.1
⎯
Turn-Off Delay Time
tD(off)
⎯
20.1
⎯
Turn-Off Fall Time
tf
⎯
4.0
⎯
Body Diode Reverse Recovery Time
trr
⎯
18
⎯
nS
IS = 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
⎯
11.9
⎯
nC
IS = 4.3A, dI/dt = 100A/μs
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
1
R
= r
* R
θJA(t)
(t)
θ
θ
JA
JA
R
= 72 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse



Html Pages

1 2 3 4 5 6 7


Arkusz danych Pobierz

Go To PDF Page


Link URL



Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Link do karty katalogowej    |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com