GP800FSS12

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

C

ies

Input capacitance

Module inductance

V

nH

-

-

20

90

-

-

-

nF

L

M

I

F

Diode forward current

I

FM

Diode maximum forward current

DC

t

A

800

1600

-

-

-

-

V

F

Diode forward voltage

I

2.4

2.2

-

A

V

I

2.5

2.3

-

V

ELECTRICAL CHARACTERISTICS

Symbol

Collector cut-off current

I

GES

Gate leakage current

Conditions

V

V

mA

1

±4

Max.

-

Typ.

-

-

Min.

-

Parameter

T

V

7.5

3.5

2.7

-

Gate threshold voltage

V

-

4

I

Units

I

CES

µA

V

GE(TH)

V

4.0

3.2

-

V

V

V

CE(SAT)

Collector-emitter saturation voltage

V

mA

50

-

-