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GP800FSS12 Arkusz danych(PDF) 4 Page - Dynex Semiconductor

Numer części GP800FSS12
Szczegółowy opis  Powerline N-Channel Single Switch IGBT Module Preliminary Information
PDF  11 Pages
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Producent  DYNEX [Dynex Semiconductor]
Strona internetowa  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP800FSS12 Arkusz danych(HTML) 4 Page - Dynex Semiconductor

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GP800FSS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Symbol
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
Conditions
ns
ns
mJ
1300
200
170
130
150
-
-
-
Parameter
Min.
Typ.
Max.
Units
1100
t
f
t
d(on)
Turn-on delay time
ns
900
-
800
Rise time
E
ON
Turn-on energy loss
ns
mJ
400
130
90
320
-
-
t
r
I
C = 800A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
T
case =
125˚C unless stated otherwise.
T
case = 25˚C unless stated otherwise
Q
rr
Diode reverse recovery charge
µC
200
150
-
Q
rr
Diode reverse recovery charge
µC
-
170
-
I
F = 800A
V
R = 50%VCES,
dI
F/dt = 2000A/µs
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
ns
ns
mJ
1500
250
250
170
200
-
-
-
1300
t
f
t
d(on)
Turn-on delay time
ns
1200
-
950
Rise time
E
ON
Turn-on energy loss
ns
mJ
450
200
150
350
-
-
t
r
I
C = 800A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
Q
rr
Diode reverse recovery charge
µC
260
200
-
Q
rr
Diode reverse recovery charge
µC
-
225
-
I
F = 800A
V
R = 50%VCES,
dI
F/dt = 2000A/µs



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