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STN4130 Arkusz danych(PDF) 2 Page - Stanson Technology |
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STN4130 Arkusz danych(HTML) 2 Page - Stanson Technology |
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2 / 7 page ![]() STN4130 N Channel Enhancement Mode MOSFET 20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN4130 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 20.0 10.0 A Pulsed Drain Current IDM 34 A Continuous Source Current (Diode Conduction) IS 36 A Power Dissipation TA=25℃ TA=70℃ PD 42 25 W Operation Junction Temperature TJ 155 ℃ Storgae Temperature Range TSTG -55/155 ℃ Thermal Resistance-Junction to Ambient RθJA 13 ℃/W |
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