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STN4130 Arkusz danych(PDF) 3 Page - Stanson Technology

Numer części STN4130
Szczegółowy opis  N Channel Enhancement Mode MOSFET
PDF  7 Pages
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Producent  STANSON [Stanson Technology]
Strona internetowa  http://www.stansontech.com
Logo STANSON - Stanson Technology

STN4130 Arkusz danych(HTML) 3 Page - Stanson Technology

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STN4130
N Channel Enhancement Mode MOSFET
20.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN4130 2009. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250mA
60
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
1
2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
100
nA
VDS=60V,VGS=0V
1
Zero Gate Voltage
Drain Current
IDSS
VDS=48V,VGS=0V
TJ=55℃
5
uA
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=20A
VGS=4.5V,ID=20A
40
50
47
58
mΩ
Forward
Transconductance
gfs
VDS=5V,ID=20A
50
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
0.78
1.0
V
Dynamic
Total Gate Charge
Qg
34
Gate-Source Charge
Qgs
16
Gate-Drain Charge
Qgd
VDS=10V,VDS=30V
ID≡20A
5.4
nC
Input Capacitance
Ciss
1600
Output Capacitance
Coss
100
Reverse
TransferCapacitance
Crss
VDS =30V,VGS=0V
F=1MHz
68
pF
7.5
Turn-On Time
td(on)
tr
6.5
33
Turn-Off Time
td(off)
tf
VDS=30V, VGS=10V
RL= 1.5Ω
ID=5.0A,VGEN=3Ω
7.5
nS



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