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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SSF1122 Arkusz danych(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF1122 Arkusz danych(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  ©Silikron Semiconductor Corporation 2010.12.30 Version: 2.1 page 1of5 SSF1122 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 60 A ID@Tc=100ْC Continuous drain current,VGS@10V 50 IDM Pulsed drain current ① 240 PD@TC=25ْC Power dissipation 1 81 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 240 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +1 75 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 110 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance —20 22 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 3.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 1 μA VDS=100V,VGS=0V —— 10 VDS=100V, VGS=0V, TJ=150ْC ID =60A BV=110V Rdson=20mΩ（Typ） Feathers: Advanced trench process technology Ultra low Rdson High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1122 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF1122 TOP View (TO220) |
Podobny numer części - SSF1122 |
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Podobny opis - SSF1122 |
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