2010.12.30

Version:

2.1

page

2of5

SSF1122

Gate-to-Source forward leakage

—

—

100

nA

Gate-to-Source reverse leakage

—

—

-100

Total gate charge

—90

—

nC

Gate-to-Source charge

—

14

—

Gate-to-Drain("Miller") charge

—

24

—

Turn-on delay time

—

18.2

—

nS

Rise time

—

15.6

—

Turn-Off delay time

—

70.5

—

Fall time

—

13.8

—

Input capacitance

—

3150

—

pF

f=1.0MHZ

Output capacitance

—

300

—

Reverse transfer capacitance

—

240

—

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

.

(Body Diode)

—

—

60

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Pulsed Source Current

.

(Body Diode) ①

—

—

240

—

—

1.3

V

Reverse Recovery Time

－

57

—

nS

di/dt=100A/μs ③

－

107

—

nC

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

②

Test condition: L =0.3mH, ID = 40A, VDD = 50V

③

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C

Gate charge test circuit

EAS test circuit