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AG503-89 Arkusz danych(PDF) 1 Page - TriQuint Semiconductor |
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AG503-89 Arkusz danych(HTML) 1 Page - TriQuint Semiconductor |
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1 / 5 page ![]() Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 1 of 5 January 2008 AG503-89 InGaP HBT Gain Block Product Features • DC – 4000 MHz • +15.5 dBm P1dB at 900 MHz • +29 dBm OIP3 at 900 MHz • 21.5 dB Gain at 900 MHz • Single Voltage Supply • Lead-free / RoHS-compliant / Green SOT-89package • Internally matched to 50 Ω Applications • Mobile Infrastructure • CATV / FTTX • W-LAN / ISM • RFID • WiMAX / WiBro Product Description The AG503-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG503-89 typically provides 21.5 dB of gain, +29 dBm OIP3, and +15.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 °C and is housed in a lead-free/green/RoHS-compliant SOT-89 industry-standard SMT package. The AG503-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG503-89 will work for other various applications within the DC to 4 GHz frequency range such as CATV and WiMAX. Functional Diagram RF IN GND RF OUT GND 1 23 4 Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 4000 Test Frequency MHz 900 Gain dB 21.3 Input Return Loss dB 15 Output Return Loss dB 17 Output P1dB dBm +15.6 Output IP3 (2) dBm +29 Output IP2 dBm +37 Noise Figure dB 3.1 Test Frequency MHz 1900 Gain dB 18.1 19.1 20.1 Output P1dB dBm +14.4 Output IP3 (2) dBm +27.4 Device Voltage V 5.0 Device Current mA 45 1. Test conditions: 25 ºC, Supply Voltage = +6 V, Rbias = 22.1 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature -55 to +150 °C DC Voltage +5.8 V RF Input Power (continuous) +10 dBm Junction Temperature +177 °C Thermal Resistance, Rth 232 °C / W Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 22.0 21.3 19.1 18.7 S11 dB -18 -15 -15 -17 S22 dB -24 -17 -10.6 -10.4 Output P1dB dBm +15.6 +15.6 +14.4 +14.2 Output IP3 (2) dBm +29.4 +29.0 +27.4 +27.2 Noise Figure dB 3.0 3.1 3.3 3.3 Ordering Information Part No. Description AG503-89G InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Package) AG503-89PCB 700 – 2400 MHz Fully Assembled Eval. Board Standard T/R size = 3000 pieces on a 13” reel. |
Podobny numer części - AG503-89_15 |
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Podobny opis - AG503-89_15 |
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