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AN487 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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AN487 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() 1/13 AN487 APPLICATION NOTE November 2003 Switched mode techniques led to the development of high efficiency circuits offering space saving and a reduction in costs, mainly of the heatsink and output LC filter. For these applications a new technology, called MULTIPOWER-BCD, has been developed which allows the integration on the same chip of isolated power DMOS elements, Bipolar transistors and CMOS logic. The technology is particularly suitable for the problems rising in the switch mode field, due to the charac- teristics of high efficiency, fast switching speed, no secondary breakdown of the power DMOS element. The great flexibility that we have at our disposal for the choice of the signal and driving sections compo- nents allows optimization and compactness of the system. With MULTIPOWER-BCD it has been possible to implement the family L497X, a new series of fully integrated switching regulators suitable for DC-DC converters working in Buck configuration. The complete family consists of five devices which differ each other only by the output current value (2A, 3.5A, 5A, 7A, 10A) they can deliver to the load. The devices rated at 2A and 3.5A are assembled in Power Dip (16+2+2), while the others are assembled in the Multiwatt15 package. Each device integrates a DMOS output power stage, a control section, limiting cur- rent and supervisor functions like Reset and Power Fail signal for microprocessors applications. Output voltage can be adjusted starting from the internal reference voltage (5.1V) up to 40V, allowing a maximum output power of 80W for the 2A version and of 400W for the 10A version. Maximum operating supply voltage is 55V. THE TECHNOLOGY The technology architecture is based on the vertical DMOS silicon gate process that allows a channel length of 1.5 micron ; using a junction isolation technique it has been possible to mix on the same chip Bipolar and CMOS transistors along with the DMOS power components (Fig. 2). Figure 1 shows how this process brings a rapid increase in power IC complexity compared to conventional bipolar technology. Figure 1. BCD process and increase in power ICs complexity. by C. Diazzi INTRODUCTION TO A 10A MONOLITHIC SWITCHING REGULATOR IN MULTIPOWER-BCD TECHNOLOGY The L497X series of high current switching regulator ICs exploit Multipower-BCD technology to achieve very high output currents with low power dissipation – up to 10A in the Multiwatt power package and 3.5A in a DIP package. |
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