UF640L-TQ2-R datasheet(1/6 Pages) UTC

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UNISONIC TECHNOLOGIES CO., LTD

UF640

Power MOSFET

www.unisonic.com.tw

1 of 6

QW-R502-066.I

18A, 200V, 0.18OHM,

N-CHANNEL POWER MOSFET



DESCRIPTION

These kinds of n-channel power MOSFET field effect transistor

have low conduction power loss, high input impedance, and high

switching speed, Linear Transfer Characteristics, so can be use in

a variety of power conversion applications.

The UF640 suitable for resonant and PWM converter

topologies.



FEATURES

* RDS(ON) < 0.18Ω @ VGS=10V, ID=10A

* Ultra Low gate charge (typical 43nC)

* Low reverse transfer capacitance (CRSS = typical 100 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

Podobny numer części - UF640L-TQ2-R

Producent	Numer części	Arkusz danych	Szczegółowy opis
Unisonic Technologies	UF640L-TQ2-R	242Kb / 5P	18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FQA70N15	738Kb / 8P	N-Channel Power MOSFET
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	GFC330	98Kb / 1P	N Channel Power MOSFET
ON Semiconductor	EMH2412-TL-H	550Kb / 7P	N-Channel Power MOSFET July, 2013
AiT Semiconductor Inc.	BSS123L	486Kb / 5P	MOSFET N-CHANNEL POWER MOSFET REV1.0