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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SIS782DN Arkusz danych(PDF) 1 Page - Vishay Telefunken |
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SIS782DN Arkusz danych(HTML) 1 Page - Vishay Telefunken |
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1 / 14 page  Vishay Siliconix SiS782DN Document Number: 67954 S11-1177-Rev. A, 13-Jun-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook PC - System Power, Memory • Buck Converter • Synchronous Rectifier Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile ( www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) e Qg (Typ.) 30 0.0095 at VGS = 10 V 16 9.5 nC 0.0120 at VGS = 4.5 V 16 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View Ordering Information: SiS782DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G S D Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16e A TC = 70 °C 16e TA = 25 °C 14.5a, b TA = 70 °C 11.5a, b Pulsed Drain Current (t = 300 µs) IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 16e TA = 25 °C 4a, b Single Pulse Avalanche Current L = 0.1 mH IAS 15 Single Pulse Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 41 W TC = 70 °C 26 TA = 25 °C 3.6a, b TA = 70 °C 2.3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 |
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