SIS782DN datasheet(5/14 Pages) TFUNK

5 / 14 page

Document Number: 67954

S11-1177-Rev. A, 13-Jun-11

www.vishay.com

Vishay Siliconix

SiS782DN

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Reverse Current (Schottky)

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

-1

-2

-3

-4

-5

-6

-7

255075

100

125

150

J -Temperature (°C)

20 V

10 V

30 V

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.008

0.016

0.024

0.032

0.040

02468

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 10 A

120

0.001

0.01

0.1

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

100

0.01

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 μs

100 ms

Limited by R

DS(on)*

1 ms

DM Limited

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

D Limited

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