VB30200C datasheet(1/5 Pages) VISHAY

Numer części	VB30200C

Szczegółowy opis	Dual High Voltage Trench MOS Barrier Schottky Rectifier

PDF	5 Pages

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Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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V30200C, VF30200C, VB30200C, VI30200C

www.vishay.com

Vishay General Semiconductor

Revision: 17-Aug-15

1

Document Number: 89014

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.526 V at IF = 5A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA

package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum



PRIMARY CHARACTERISTICS

IF(AV)

2 x 15 A

VRRM

200 V

IFSM

250 A

VF at IF = 15 A

0.648 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variations

Dual common cathode

TO-220AB

1

2

3

TO-263AB

1

2

K

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

K

HEATSINK

V30200C

VF30200C

VB30200C

TMBS

®

ITO-220AB

1

2

3

VI30200C

1

K

2

3

TO-262AA

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

PIN 3

K

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL V30200C

VF30200C VB30200C

VI30200C

UNIT

Maximum repetitive peak reverse voltage

VRRM

200

V

Maximum average forward rectified current



(fig. 1)

per device

IF(AV)

30

A

per diode

15

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

250

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode

EAS

200

mJ

Peak repetitive reverse current at tp = 2 μs, 1 kHz,

TJ = 38 °C ± 2 °C per diode

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

-40 to +150

°C

Podobny numer części - VB30200C

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	VB30200C	158Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08
	VB30200C	160Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30200C	157Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A 17-Aug-15
	VB30200C	216Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A 19-Jun-2018
Inchange Semiconductor ...	VB30200C	314Kb / 2P	Schotty Barrier Diode

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