| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 Vishay Siliconix |
VB30200C
|
158Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A
31-Jul-08
|
|
VB30200C
|
160Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30200C
|
157Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A
17-Aug-15
|
|
VB30200C
|
155Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
17-Aug-15
|
|
VB30200C
|
216Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A
19-Jun-2018
|
 Inchange Semiconductor ... |
VB30200C
|
314Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30200C-E3-4W
|
160Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30200C-E3-8W
|
160Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30200C-E3/4W
|
158Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A
31-Jul-08
|
|
VB30200C-E3/8W
|
158Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A
31-Jul-08
|