VB30200C Arkusz danych, PDF

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	VB30200C	158Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08
	VB30200C	160Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30200C	157Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A 17-Aug-15
	VB30200C	155Kb/5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 17-Aug-15
	VB30200C	216Kb/6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A 19-Jun-2018
Inchange Semiconductor ...	VB30200C	314Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB30200C-E3-4W	160Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30200C-E3-8W	160Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 24-Jun-09
	VB30200C-E3/4W	158Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08
	VB30200C-E3/8W	158Kb/5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08

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