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STGIPN3H60AT Arkusz danych(PDF) 8 Page - STMicroelectronics

Numer części STGIPN3H60AT
Szczegółowy opis  SLLIMM™nano (small low-loss intelligent molded module) IPM, 3 A - 600 V 3-phase IGBT inverter bridge
PDF  19 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STGIPN3H60AT
8/19
DocID026945 Rev 1
3
Electrical characteristics
Tj = 25 °C unless otherwise specified.
Note:
tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are
the switching time of IGBT itself under the internally given gate driving condition.
Figure 3. Switching time test circuit
Table 7. Inverter part
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector-emitter
saturation voltage
VCC = Vboot = 15 V, VIN
(1)= 0 - 5 V,
IC = 1 A
-
2.15
2.6
V
VCC = Vboot = 15 V, VIN
(1)= 0 - 5 V,
IC = 1 A, TJ = 125 °C
-1.65
ICES
Collector-cut off current
(VIN
(1)= 0 “logic state”)
VCE = 550 V, VCC = VBoot = 15 V
-
250
µA
VF
Diode forward voltage
VIN
(1) = 0 “logic state”, I
C = 1 A
-
1.7
V
Inductive load switching time and energy
ton
Turn-on time
VDD = 300 V,
VCC = Vboot = 15 V,
VIN
(1) = 0 - 5 V,
IC = 1 A
(see Figure 4)
-275
ns
tc(on)
Crossover time (on)
-
90
toff
Turn-off time
-
890
tc(off)
Crossover time (off)
-
125
trr
Reverse recovery time
-
50
Eon
Turn-on switching losses
-
18
µJ
Eoff
Turn-off switching losses
-
13
1.
Applied between
HINi, LINi and GND for i = U, V, W (LIN inputs are active-low).
VBOOT>VCC
L
IC
VCE
VCC
INPUT
0
1
BUS
Lin
Hin
Vcc
LVG
HVG
OUT
BOOT
GND



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