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CPC3720 Arkusz danych(PDF) 2 Page - IXYS Corporation

Numer części CPC3720
Szczegółowy opis  Depletion-Mode FET
PDF  5 Pages
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC3720 Arkusz danych(HTML) 2 Page - IXYS Corporation

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PRELIMINARY
INTEGRATED CIRCUITS DIVISION
PRELIMINARY
2
R00J
CPC3720
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings
Units
Drain-to-Source Voltage
350
V
P
Gate-to-Source Voltage
±15
V
P
Pulsed Drain Current
600
mA
Total Package Dissipation
1.4 1
W
Junction Temperature
150
ºC
Operational Temperature
-55 to +125
ºC
Storage Temperature
-55 to +125
ºC
1 Mounted on FR4 board 1"x1"x0.062"
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-to-Source Breakdown Voltage
V
(BR)DSX
V
GS= -5V, ID=100µA
350
-
-
V
P
Gate-to-Source Off Voltage
V
GS(off)
V
DS= 5V, ID=1mA
-1.6
-
-3.9
V
Change in V
GS(off) with Temperatures
dV
GS(off)/dT
V
DS= 5V, ID=1A
-
-
4.5
mV/ºC
Gate Body Leakage Current
I
GSS
V
GS=±15V, VDS=0V
-
-
100
nA
Drain-to-Source Leakage Current
I
D(off)
V
GS= -5V, VDS=350V
-
-
1
A
V
GS= -5V, VDS=280V, TA=125ºC
-
-
1
mA
Saturated Drain-to-Source Current
I
DSS
V
GS= 0V, VDS=15V
130
-
-
mA
Static Drain-to-Source ON-State Resistance
R
DS(on)
V
GS= 0V, ID=130mA
-
-
22
Change in R
DS(on) with Temperatures
dR
DS(on)/dT
V
GS= 0V, ID=130mA
-
-
1.1
%/ºC
Forward Transconductance
G
FS
I
D= 100mA, VDS = 10V
225
-
-
m
Input Capacitance
C
ISS
V
GS= -5V
V
DS= 25V
f= 1MHz
-
70
350
pF
Common Source Output Capacitance
C
OSS
20
60
Reverse Transfer Capacitance
C
RSS
10
60
Turn-On Delay Time
t
d(on)
V
DD= 25V
I
D= 150mA
V
GS= 0V to -10V
R
gen= 50
-
20
-ns
Rise Time
t
r
10
Turn-Off Delay Time
t
d(off)
20
Fall time
t
f
50
Source-Drain Diode Voltage Drop
V
SD
V
GS= -5V, ISD= 150mA
-
0.6
1.8
V
Thermal Resistance (Junction to Ambient)
RJA
-
-
90
-
ºC/W
Switching Waveform & Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
RL
OUTPUT
D.U.T.
ton
td(on)
toff
td(off)
INPUT
INPUT
OUTPUT
0V
V
DS
Rgen
0V
-10V
tf
tr



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