PRELIMINARY

PRELIMINARY

DS-CPC3720-R00J

1

CPC3720

350V N-Channel

Depletion-Mode FET

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

350V

P

22



130mA

SOT-89

Applications

Features

Description

Ordering Information

Package Pinout

P

The CPC3720 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high input

impedance, for use in high power applications. The

CPC3720 is a highly reliable FET device that has

been used extensively in our solid state relays for

industrial and telecommunications applications.

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3720 offers a low, 22

 maximum, on-state

resistance at 25ºC.

The CPC3720 has a minimum breakdown voltage

of 350V

As with all MOS devices, the FET structure prevents

thermal runaway and thermal-induced secondary

breakdown.

Circuit Symbol

S

G

D

(SOT-89)

G

D

S

D

Part #

Description

CPC3720CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)