TO-220-3L Plastic-Encapsulate MOSFETS

CJP 07N60

N-Channel Power MOSFET

General Description

The high voltage MOSFET uses an advanced termination scheme

to provide enhanced voltage-blocking capability without degrading

performance over time. In addition , this advanced MOSFET is designed

to withstand high energy in avalanche and commutation modes . The

new energy efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed switching

applications in power suppliers, converters and PWM motor controls ,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage transients.

FEATURES

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source voltage

600

Gate-Source Voltage

±

20

V

Continuous Drain Current

7

Pulsed Drain Current

20

A

Power Dissipation

2

W

Single Pulsed Avalanche Energy*

530

mJ

Thermal Resistance, Junction-to-Ambient

62.5

℃/W

Junction Temperature

150

Storage Temperature

-50 ~+150

℃

TO-220-3L

1. GATE

2. DRAIN

3. SOURCE

1 of 3

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CJP07N60