STM8AF6213 datasheet(70/106 Pages) STMICROELECTRONICS

70 / 106 page

Electrical characteristics

STM8AF6213/23/23A/26

70/106

DocID025118 Rev 5

Low speed internal RC oscillator (LSI)

Subject to general operating conditions for VDD and TA.

9.3.5

Memory characteristics

RAM and hardware registers

Flash program memory/data EEPROM memory

General conditions: TA = -40 to 150 °C.

Table 42. LSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fLSI

Frequency

110(1)

1. Tested in production.

128

150(1)

kHz

tsu(LSI) LSI oscillator wakeup time

µs

IDD(LSI) LSI oscillator power consumption

µA

Table 43. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing the data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design, not tested in production.

Halt mode (or reset)

VIT-max(2)

2. Refer to the operating conditions for the value of VIT-max

Table 44. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage



(all modes, execution/write/erase)

fCPU is 0 to 16 MHz

with 0 ws

3.0

5.5

Operating voltage



(code execution)

2.6

5.5

tprog

Standard programming time (including

erase) for byte/word/block



(1 byte/4 byte/64 byte)

6.0

6.6

Fast programming time for 1 block

(64 byte)

3.0

3.3

tERASE Erase time for 1 block (64 byte)

3.0

3.3

STM8AF6213 Arkusz danych(PDF) 70 Page - STMicroelectronics

STM8AF6213 Arkusz danych(HTML) 70 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Arkusz danych Pobierz

Link URL