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STM32F427AI Arkusz danych(PDF) 100 Page - STMicroelectronics

Numer części STM32F427AI
Szczegółowy opis  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  239 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F427AI Arkusz danych(HTML) 100 Page - STMicroelectronics

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Electrical characteristics
STM32F427xx STM32F429xx
100/238
DocID024030 Rev 9
6.3.7
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 23: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
All I/O pins are in input mode with a static value at VDD or VSS (no load).
All peripherals are disabled except if it is explicitly mentioned.
The Flash memory access time is adjusted both to fHCLK frequency and VDD range
(see Table 18: Limitations depending on the operating power supply range).
Regulator ON
The voltage scaling and over-drive mode are adjusted to fHCLK frequency as follows:
Scale 3 for fHCLK ≤120 MHz
Scale 2 for 120 MHz < fHCLK ≤144 MHz
Scale 1 for 144 MHz < fHCLK ≤180 MHz. The over-drive is only ON at 180 MHz.
The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
External clock frequency is 4 MHz and PLL is ON when fHCLK is higher than 25 MHz.
The maximum values are obtained for VDD = 3.6 V and a maximum ambient
temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless
otherwise specified.



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