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LM675 Arkusz danych(PDF) 5 Page - National Semiconductor (TI) |
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LM675 Arkusz danych(HTML) 5 Page - National Semiconductor (TI) |
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5 / 8 page ![]() Application Hints STABILITY The LM675 is designed to be stable when operated at a closed-loop gain of 10 or greater, but, as with any other high-current amplifier, the LM675 can be made to oscillate under certain conditions. These usually involve printed cir- cuit board layout or output/input coupling. When designing a printed circuit board layout, it is important to return the load ground, the output compensation ground, and the low level (feedback and input) grounds to the circuit board ground point through separate paths. Otherwise, large currents flowing along a ground conductor will generate volt- ages on the conductor which can effectively act as signals at the input, resulting in high frequency oscillation or excessive distortion. It is advisable to keep the output compensation components and the 0.1 µF supply decoupling capacitors as close as possible to the LM675 to reduce the effects of PCB trace resistance and inductance. For the same reason, the ground return paths for these components should be as short as possible. Occasionally, current in the output leads (which function as antennas) can be coupled through the air to the amplifier in- put, resulting in high-frequency oscillation. This normally happens when the source impedance is high or the input leads are long. The problem can be eliminated by placing a small capacitor (on the order of 50 pF to 500 pF) across the circuit input. Most power amplifiers do not drive highly capacitive loads well, and the LM675 is no exception. If the output of the LM675 is connected directly to a capacitor with no series re- sistance, the square wave response will exhibit ringing if the capacitance is greater than about 0.1 µF. The amplifier can typically drive load capacitances up to 2 µF or so without os- cillating, but this is not recommended. If highly capacitive loads are expected, a resistor (at least 1 Ω) should be placed in series with the output of the LM675. A method commonly employed to protect amplifiers from low impedances at high frequencies is to couple to the load through a 10 Ω resistor in parallel witha5µH inductor. CURRENT LIMIT AND SAFE OPERATING AREA (SOA) PROTECTION A power amplifier’s output transistors can be damaged by excessive applied voltage, current flow, or power dissipation. The voltage applied to the amplifier is limited by the design of the external power supply, while the maximum current passed by the output devices is usually limited by internal circuitry to some fixed value. Short-term power dissipation is usually not limited in monolithic operational power amplifiers, and this can be a problem when driving reactive loads, which may draw large currents while high voltages appear on the output transistors. The LM675 not only limits current to around 4A, but also reduces the value of the limit current when an output transistor has a high voltage across it. When driving nonlinear reactive loads such as motors or loudspeakers with built-in protection relays, there is a possi- bility that an amplifier output will be connected to a load whose terminal voltage may attempt to swing beyond the power supply voltages applied to the amplifier. This can cause degradation of the output transistors or catastrophic failure of the whole circuit. The standard protection for this type of failure mechanism is a pair of diodes connected be- tween the output of the amplifier and the supply rails. These are part of the internal circuitry of the LM675, and needn’t be added externally when standard reactive loads are driven. THERMAL PROTECTION The LM675 has a sophisticated thermal protection scheme to prevent long-term thermal stress to the device. When the temperature on the die reaches 170˚C, the LM675 shuts down. It starts operating again when the die temperature drops to about 145˚C, but if the temperature again begins to rise, shutdown will occur at only 150˚C. Therefore, the de- vice is allowed to heat up to a relatively high temperature if the fault condition is temporary, but a sustained fault will limit the maximum die temperature to a lower value. This greatly reduces the stresses imposed on the IC by thermal cycling, which in turn improves its reliability under sustained fault conditions. This circuitry is 100% tested without a heat sink. Since the die temperature is directly dependent upon the heat sink, the heat sink should be chosen for thermal resis- tance low enough that thermal shutdown will not be reached during normal operaton. Using the best heat sink possible within the cost and space constraints of the system will im- prove the long-term reliability of any power semiconductor. POWER DISSIPATION AND HEAT SINKING The LM675 should always be operated with a heat sink, even though at idle worst case power dissipation will be only 1.8W (30 mA x 60V) which corresponds to a rise in die tem- perature of 97˚C above ambient assuming θ jA = 54˚C/W for a TO-220 package. This in itself will not cause the thermal protection circuitry to shut down the amplifier when operating at room temperature, but a mere 0.9W of additional power dissipation will shut the amplifier down since T J will then in- crease from 122˚C (97˚C + 25˚C) to 170˚C. In order to determine the appropriate heat sink for a given application, the power dissipation of the LM675 in that appli- cation must be known. When the load is resistive, the maxi- mum average power that the IC will be required to dissipate is approximately: where V S is the total power supply voltage across the LM675, R L is the load resistance and PQ is the quiescent power dissipation of the amplifier. The above equation is only an approximation which assumes an “ideal” class B out- put stage and constant power dissipation in all other parts of the circuit. As an example, if the LM675 is operated on a 50V power supply with a resistive load of 8 Ω, it can develop up to 19W of internal power dissipation. If the die temperature is to remain below 150˚C for ambient temperatures up to 70˚C, the total junction-to-ambient thermal resistance must be less than Using θ JC = 2˚C/W, the sum of the case-to-heat sink inter- face thermal resistance and the heat-sink-to-ambient ther- mal resistance must be less than 2.2˚C/W. The case-to-heat-sink thermal resistance of the TO-220 package varies with the mounting method used. A metal-to-metal in- terface will be about 1˚C/W if lubricated, and about 1.2˚C/W if dry. If a mica insulator is used, the thermal resistance will be about 1.6˚C/W lubricated and 3.4˚C/W dry. For this ex- www.national.com 5 |
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