If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage

Input Voltage

−V

Operating Temperature

0˚C to +70˚C

Storage Temperature

−65˚C to +150˚C

Junction Temperature

150˚C

Power Dissipation (Note 2)

30W

Lead Temperature

(Soldering, 10 seconds)

260˚C

ESD rating to be determined.

Electrical Characteristics

V

Parameter

Conditions

Typical

Tested Limit

Units

Supply Current

P

18

50 (max)

mA

Input Offset Voltage

V

1

10 (max)

mV

Input Bias Current

V

0.2

2 (max)

µA

Input Offset Current

V

50

500 (max)

nA

Open Loop Gain

R

90

70 (min)

dB

PSRR

∆V

90

70 (min)

dB

CMRR

V

90

70 (min)

dB

Output Voltage Swing

R

V

Offset Voltage Drift Versus Temperature

R

25

µV/˚C

Offset Voltage Drift Versus Output Power

25

µV/W

Output Power

THD = 1%,f

25

20

W

Gain Bandwidth Product

f

5.5

MHz

Max Slew Rate

8

V/µs

Input Common Mode Range

V

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-

tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-

antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is

given, however, the typical value is a good indication of device performance.

Typical Applications

Generating a Split Supply From a Single Supply

DS006739-3

www.national.com

2