© Semiconductor Components Industries, LLC, 2016

April, 2016 − Rev. 12

1

Publication Order Number:

BAS16HT1/D

BAS16H, SBAS16H

Switching Diode

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

100

Vdc

Peak Forward Current

200

mAdc

Non−Repetitive Peak Forward Surge

Current, 60 Hz

500

mAdc

Repetitive Peak Forward Current

(Note 2)

1.0

A

Non−Repetitive Peak Forward Current

surge)

t = 1

ms

t = 10

ms

t = 100

ms

t = 1 ms

t = 1 s

36.0

18.0

6.0

3.0

0.7

A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

(Note 1)

Derate above 25

°C

200

1.57

mW

mW/

°C

Thermal Resistance Junction to Ambient

635

°C/W

Junction and Storage Temperature

−55 to

150

°C

1. FR-4 Minimum Pad.

2. Square Wave, f = 40 kHz, PW = 200 ns

www.onsemi.com

SOD−323

CASE 477

STYLE 1

MARKING DIAGRAM

1

CATHODE

2

ANODE

A6

= Specific Device Code

M

= Date Code

Device

Package

Shipping†

ORDERING INFORMATION

BAS16HT1G

SOD−323

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

2

A6 M

SBAS16HT1G

SOD−323

(Pb−Free)

3000 /T ape & Reel

BAS16HT3G

SOD−323

(Pb−Free)

10000 / Tape & Reel

SBAS16HT3G

SOD−323

(Pb−Free)

10000 / Tape & Reel