BAS16HT3G datasheet(2/4 Pages) ONSEMI

2 / 4 page

BAS16H, SBAS16H

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 100 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

−

1.0

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

100

−

Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

−

715

855

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

2.0

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr

−

6.0

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc,

RL = 500 W)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

BAS16HT3G Arkusz danych(PDF) 2 Page - ON Semiconductor

BAS16HT3G Arkusz danych(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

Arkusz danych Pobierz

Link URL