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VS-GT100TP120N Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części VS-GT100TP120N
Szczegółowy opis  Half Bridge IGBT Power Module, 1200 V, 100 A
PDF  7 Pages
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-GT100TP120N Arkusz danych(HTML) 2 Page - Vishay Siliconix

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VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-15
2
Document Number: 93800
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Turn-on delay time
td(on)
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, TJ = 25 °C
-
187
-
ns
Rise time
tr
-57
-
Turn-off delay time
td(off)
-
180
-
Fall time
tf
-
149
-
Turn-on switching loss
Eon
-4.97-
mJ
Turn-off switching loss
Eoff
-4.69-
Turn-on delay time
td(on)
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, TJ = 125 °C
-
189
-
ns
Rise time
tr
-58
-
Turn-off delay time
td(off)
-
187
-
Fall time
tf
-
220
-
Turn-on switching loss
Eon
-7.80-
mJ
Turn-off switching loss
Eoff
-5.85-
Input capacitance
Cies
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
-
12.8
-
nF
Output capacitance
Coes
-0.46-
Reverse transfer capacitance
Cres
-0.32-
SC data
ISC
tp  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
-
890
-
A
Stray inductance
LCE
-
-
30
nH
Module lead resistance, terminal to chip
RCC’+EE’
-0.75-
m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Forward voltage
VF
IF = 100 A
TJ = 25 °C
-
1.82
2.20
V
TJ = 125 °C
-
1.95
-
Reverse recovery charge
Qrr
IF = 100 A, VR = 600 V,
RG = 5.6 
VGE = -15 V
TJ = 25 °C
-
8.1
-
μC
TJ = 125 °C
-
14.0
-
Peak reverse recovery current
Irr
TJ = 25 °C
-
81
-
A
TJ = 125 °C
-
98
-
Reverse recovery energy
Erec
TJ = 25 °C
-
2.99
-
mJ
TJ = 125 °C
-
4.85
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature
TJ
-
-
175
°C
Storage temperature range
TStg
-40
-
125
°C
Junction to case
per ½ module
IGBT
RthJC
-
-
0.23
K/W
Diode
-
-
0.36
Case to sink (Conductive grease applied)
RthCS
-0.05-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g



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