VS-GT100TP120N datasheet(4/7 Pages) VISHAY

Numer części	VS-GT100TP120N

Szczegółowy opis	Half Bridge IGBT Power Module, 1200 V, 100 A

PDF	7 Pages

Scroll/Zoom	100%

Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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VS-GT100TP120N

www.vishay.com

Vishay Semiconductors

Revision: 11-Jun-15

Document Number: 93800

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 6 - IGBT Transient Thermal Impedance

Fig. 7 - Diode Forward Characteristics

Fig. 8 - Diode Switching Loss vs. IF

Fig. 9 - Diode Switching Loss vs. RG

0.001

0.01

0.1

0.001

0.01

0.1

IGBT

t (s)

100

125

150

175

200

0.5

1.5

2.5

25 °C

125 °C

VF (V)

IF (V)

100

150

200

REC

= 600 V

G = 5.6 Ω

GE = - 15 V

J = 125 °C

RG (Ω)

102030405060

REC

= 600 V

F = 100 A

GE = - 15 V

J = 125 °C

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