May 2016

DocID027662 Rev 2

1/14

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

SCT10N120

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ

(typ., TJ = 150 °C) in an HiP247™ package

Datasheet - production data

Figure 1: Internal schematic diagram

Features



Very tight variation of on-resistance vs.

temperature



Slight variation of switching losses vs.

temperature



Very high operating temperature capability



Very fast and robust intrinsic body diode



Low capacitance

Applications



Solar inverters, UPS



Motor drives



High voltage DC-DC converters



Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced

exploiting the advanced, innovative properties of

wide bandgap materials. This results in

unsurpassed on-resistance per unit area and

very good switching performance almost

independent of temperature. The outstanding

thermal properties of the SiC material, combined

with the device’s housing in the proprietary

HiP247™ package, allows designers to use an

industry-standard outline with significantly

improved thermal capability. These features

render the device perfectly suitable for high-

efficiency and high power density applications.

Table 1: Device summary

Order code

Marking

Package

Packaging

SCT10N120

SCT10N120

HiP247™

Tube

The device meets ECOPACK standards, an environmentally-friendly grade of products

commonly referred to as “halogen-free”. See Section 6: "Package information".

1

2

3

HiP247

AM01475v1_Tab

D(2, TAB)

G(1)

S(3)