SCT10N120 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

SCT10N120

4/14

DocID027662 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

1200

IDSS

Zero gate voltage

drain current

VDS = 1200 V, VGS = 0 V

µA

VDS = 1200 V, VGS = 0 V,

TJ = 200 °C

(1)

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V,

VGS = -10 to 22 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

1.8

3.5

RDS(on)

Static drain-source

on-resistance

VGS = 20 V, ID = 6 A

500

690

mΩ

VGS = 20 V, ID = 6 A,

TJ = 150 °C

520

mΩ

VGS = 20 V, ID = 6 A,

TJ = 200 °C

580

mΩ

Notes:

(1)

Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz,

VGS = 0 V

290

Coss

Output capacitance

Crss

Reverse transfer capacitance

Total gate charge

VDD = 800 V, ID = 6 A,

VGS = 0 to 20 V

Qgs

Gate-source charge

Qgd

Gate-drain charge

Gate input resistance

f=1 MHz, ID=0 A

Table 6: Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

Turn-on switching energy

VDD = 800 V, ID = 6 A

RG= 10 Ω,

VGS = -5 to 20 V

µJ

Eoff

Turn-off switching energy

µJ

Eon

Turn-on switching energy

VDD = 800 V, ID = 6 A

RG= 10 Ω,

VGS = -5 to 20 V

TJ= 150 °C

104

µJ

Eoff

Turn-off switching energy

µJ

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