September 2014

DocID025835 Rev 2

1/16

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

STD52P3LLH6

P-

channel 30 V, 0.01 Ω typ., 52 A, STripFET™ H6

Power MOSFET in a DPAK package

Datasheet - preliminary data

Figure 1: Internal schematic diagram

Features

Order codes

STD52P3LLH6

30 V

0.012 Ω

52 A

70 W



Very low on-resistance



Very low gate charge



High avalanche



Low gate drive power loss

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

developed using t

he STripFET™ H6 technology,

with a new trench gate structure. The resulting

packages.

Table 1: Device summary

Order codes

Marking

Package

Packaging

STD52P3LLH6 52P3LLH6

DPAK

Tape and

reel

For the P-channel Power MOSFETs the

actual polarity of the voltages and the

current must be reversed.