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STD52P3LLH6 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STD52P3LLH6 Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STD52P3LLH6 Electrical ratings DocID025835 Rev 2 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 52 A ID Drain current (continuous) at TC = 100 °C 37.5 A IDM (1) Drain current (pulsed) 208 A PTOT Total dissipation at TC = 25 °C 70 W Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Notes: (1) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 °C/W For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. |
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