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LT4220IGN Arkusz danych(PDF) 4 Page - Linear Technology |
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LT4220IGN Arkusz danych(HTML) 4 Page - Linear Technology |
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4 / 16 page ![]() 4 LT4220 4220f The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 5V, VEE = –5V, unless otherwise noted. AC ELECTRICAL CHARACTERISTICS TYPICAL PERFOR A CE CHARACTERISTICS SUPPLY VOLTAGE (V) 0 2 3 20 4220 G01 1 0 5 10 15 4 FB+ VOLTAGE (V) –1.5 50 40 30 20 10 0 –1.0 –0.5 0 0.5 4220 G02 1.0 1.5 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 FB– VOLTAGE (V) 60 50 40 30 20 10 0 4220 G03 TA = 25°C ICC IEE VCC = 5V VEE = –5V ON+ = 2V ON– = –2V TA = 25°C VCC = 5V VEE = –5V ON+ = 2V ON– = –2V TA = 25°C Positive Circuit Breaker Sense Voltage vs FB+ Voltage Negative Circuit Breaker Sense Voltage vs FB– Voltage Supply Current vs Supply Voltage SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS tPHLON+ ON+ Low to GATE+ Low 5k Pull-Up to GATE+, 1nF Load Capacitor q 0.6 0.8 1.2 µs tPLHON+ ON+ High to GATE+ High 5k Pull-Up to GATE+, 1nF Load Capacitor q 0.6 1.5 3 µs tPHLFB+ FB+ Low to PWRGD Low 5k Pull-Up to PWRGD q 0.5 0.8 1.2 µs tPLHFB+ FB+ High to PWRGD High 5k Pull-Up to PWRGD q 0.6 1.25 3 µs tPHLON– ON– Low to GATE– Low 5k Pull-Up to GATE–, 1nF Load Capacitor q 0.6 1 1.5 µs tPLHON– ON– High to GATE– High 5k Pull-Up to GATE–, 1nF Load Capacitor q 1 2.1 3.5 µs tPHLFB– FB– Low to PWRGD Low 5k Pull-Up to PWRGD q 0.6 1 1.5 µs tPLHFB– FB– High to PWRGD High 5k Pull-Up to PWRGD q 0.8 1.25 2 µs tSENSE+ SENSE+ to GATE+ Low 1nF On GATE+, 100mV Step, 5k Pull-Up q 146 µs tSENSE– SENSE– to GATE– Low 1nF On GATE–, 100mV Step, 5k Pull-Up q 146 µs Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages referenced to ground (GND) unless specified. Note 3: The absolute voltage difference between FB+ and FB– required to force either the GATE+ or GATE– current to 0 µA. |
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