HSP051-4N10 datasheet(2/11 Pages) STMICROELECTRONICS

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Characteristics

HSP051-4N10

2/11

DocID025979 Rev1

Characteristics

Table 1. Absolute maximum ratings Tamb = 25 °C

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

Operating junction temperature range

-40 to +150

°C

Tstg

Storage temperature range

-65 to +150

°C

Maximum lead temperature for soldering during 10 s

260

°C

Table 2. Electrical characteristics Tamb = 25 °C

Symbol

Test conditions

Min. Typ. Max. Unit

VBR

IR = 1 mA

4.5

5.8

IRM

VRM = 3.6 V

100

VCL

IPP = 1 A, 8/20 µs

VCL

IEC 61000-4-2, +8 kV contact (IPP = 16 A), measured at 30 ns

Dynamic resistance, pulse duration 100 ns

I/O to GND

0.48

Ω

GND to I/O

0.96

CI/O - I/O

VI/O = 0 V, F = 200 MHz to 9 GHz

0.2

0.3

CI/O - GND VI/O = 0 V

F = 200 MHz to 2.5 GHz

0.4

0.55

F = 2.5 GHz to 9 GHz

0.35

0.45

-3dB

GHz

Zdiff

Time domain reflectometry: tr = 200 ps (10 - 90%), Z0 = 100 Ω

100

115

Ω

Figure 2. Leakage current versus junction

temperature (typical values)

Figure 3. S21 attenuation measurement

IR (nA)

100

125

150

Tj (°C)

VR = VRM = 3.6V

S21 (db)

100k

10M

100M

10G

-3

-2.5

-2

-1.5

-1

-0.5

0 V

2.5 V

3.6 V

F (Hz)

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