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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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EC734N60 Arkusz danych(PDF) 1 Page - E-CMOS Corporation |
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EC734N60 Arkusz danych(HTML) 1 Page - E-CMOS Corporation |
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1 / 6 page  EC734N60 N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 4G22N-Rev.F001 Features ◆ 600V, 4A, RDS(ON)(Max.) = 2.4Ω @ VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 % Avalanche Tested Applications Charger Standby Power. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Symbol Parameter Limit Unit TO-220F TO-251 TO-252 VDS Drain – Source Voltage a 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous, TC =25 ℃ 4 A Drain Current-Continuous, TC =100 ℃ 2.5 A IDM Drain Current-Pulsed b 16 A PD Maximum Power Dissipation @ TJ =25 ℃ 33 77 W EAS Single Pulsed Avalanche Energy e 217 mJ TJ, TSTG Operating and Store Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Value Unit Rθ JC Thermal Resistance, Junction-Case Max. 3.58 1.61 ℃ /W Rθ JA Thermal Resistance, Junction-Ambient Max. 120 110 ℃ /W |
Podobny numer części - EC734N60 |
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Podobny opis - EC734N60 |
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