1200 Datasheet(PDF) - NXH040P120MNF1PTG_V01

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	NXH040P120MNF1PTG	1Mb/8P	Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package February, 2023 - Rev. P1
	NXH020F120MNF1PTG	1Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package February, 2023 - Rev. P1
	NXH020P120MNF1PTG	1Mb/14P	Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package February, 2023 - Rev. P2
	NVVR26A120M1WSS	347Kb/11P	Automotive 1200 V, 2.6 m N-Channel MOSFET, 400 A Half-Bridge Power Module VE-Trac B2 SiC Module December, 2021-Rev. 3
	NXH006P120MNF2PTG	1Mb/10P	Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package February, 2023 - Rev. 4
	FGHL60T120RWD	379Kb/9P	IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.5 V, 60 A June, 2023 - Rev. 1
	FGY60T120SWD	291Kb/8P	IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 60 A March, 2023 - Rev. 0
	AFGHL40T120RWD	231Kb/9P	IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A October, 2023 - Rev. 0
	FGY100T120SWD	286Kb/8P	IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 100 A March, 2023 - Rev. 0
	NXH020U90MNF2PTG	2Mb/14P	Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package February, 2023 - Rev. 4
	NXH004P120M3F2PTHG	2Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC April, 2023 - Rev. P1
	NXH006P120M3F2PTHG	407Kb/12P	Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC November, 2023 - Rev. 0
	NXH003P120M3F2PTHG	2Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC April, 2023 - Rev. P1
	NXH003P120M3F2PTNG	2Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0
	NXH004P120M3F2PTNG	2Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC July, 2023 - Rev. 0

1200 Arkusz danych, PDF

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