1200 Datasheet(PDF) - ADP280120W3

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	ADP280120W3	8Mb/15P	Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 3.8 m typ. SiC MOSFET gen.3 based October 2022 Rev 4
	ADP360120W3	8Mb/15P	Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 2.55 m typ. SiC MOSFET gen.3 based October 2022 Rev 4
	STW8N120K5	278Kb/13P	N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 package DS12549 - Rev 3 - May 2018
	STGP15M120F3	429Kb/15P	Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package August 2018 Rev 3
	STGP8M120DF3	343Kb/15P	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package April 2018 Rev 2
	STP8N120K5	278Kb/13P	N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package DS12529 - Rev 3 - May 2018
	ADP480120W3	8Mb/15P	Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 m typ. SiC MOSFET gen.3 based Rev 3 - October 2022
	SCTWA60N120G2AG	242Kb/12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Rev 1 - December 2020
	SCT025H120G3AG	369Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package Rev 1 - November 2022
	SCT070H120G3AG	396Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package Rev 3 - April 2023
	SCTH60N120G2-7AG	356Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package Rev 1 - August 2021
	A2P75S12M3	709Kb/13P	ACEPACKTM 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC January 2019 Rev 6
	SCTWA40N120G2AG	257Kb/12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package Rev 4 - November 2021
	SCT020H120G3AG	362Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package Rev 1 - September 2022
	STH2N120K5-2AG	440Kb/14P	Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package June 2020 Rev 5
	SCT040H120G3AG	386Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package Rev 1 - October 2022
	STGYA75H120DF2	2Mb/15P	Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package October 2021 Rev 2
	STGYA50H120DF2	2Mb/15P	Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package January 2022 Rev 1
	STGYA50M120DF3	2Mb/15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package October 2021 Rev 2
	A2P75S12M3-F	868Kb/14P	ACEPACKTM 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC January 2019 Rev 5

1200 Arkusz danych, PDF

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