The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
   
. . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.
   
• Guaranteed 28 Volt, 150 MHz Performance
    Output Power = 5.0 Watts
    Minimum Gain = 11 dB
    Efficiency — 55% (Typical)
• Small–Signal and Large–Signal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W
    Output = 10.6 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
    With 30:1 VSWR
• Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A
    Operation