The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

. . . designed for wideband large–signal output and driver stages up to 400 MHz range.

• Guaranteed 28 Volt, 150 MHz Performance
    Output Power = 30 Watts
    Minimum Gain = 13 dB
    Efficiency — 60% (Typical)
• Small–Signal and Large–Signal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques