The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode

Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source amplifier applications in 12.5 Volt mobile and base station equipment.

• Guaranteed Performance at 54 MHz, 12.5 Volts
   Output Power — 55 Watts PEP
   Power Gain — 13 dB Min
   Two–Tone IMD — –25 dBc Max
   Efficiency — 40% Min, Two–Tone Test
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Aluminum Nitride Package Electrical Insulator
• Circuit Board Photomaster Available by Ordering Document
   MRF255PHT/D from Motorola Literature Distribution.