AFT05MP075N datasheet(3/21 Pages) NXP

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AFT05MP075NR1 AFT05MP075GNR1

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.3

—

Output Capacitance

(VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS = 12.5 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

148

—

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pin = 1 W,f= 520 MHz

Common--Source Amplifier Output Power

Pout

—

Drain Efficiency

D

—

68.5

—

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 400 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

520

> 65:1 at all Phase Angles

(3 dB Overdrive)

No Device Degradation

1. Each side of device measured separately.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

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